Read our latest article in Microwave Product Digest, which describes the benefits of using GaN technology for the realization of microwave power amplifiers (PA). Design examples are provided for four different implementation options:

• PA modules using commercially available discrete transistors
• PA components using discrete GaN transistor die and Integrated Passive Devices (IPDs)
• PA modules using commercially available GaN PA MMICs
• Full custom GaN PA MMICs

PRFI's Dr Robert Smith will give a presentation on "Doherty power amplifiers – moving to mmWave" at EDICON Online, on 6 October at 13.00 EST (18:00 BST). Register for the event to view his presentation.